Abstract
Evaporated Au and Sn films with total thicknesses in the range 1000–5000 Å were studied using backscattering of 2.0 MeV 4He ions, scanning and transmission electron microscopy and X-ray diffraction. Si and oxidized Si were used as substrates. In addition, some films were made self-supporting. The atomic percentage of Sn in the films ranged from about 30 to 90. Diffusion was observed within the unannealed films and resulted in the formation of the phases AuSn, AuSn 2 and AuSn 4. The backscattering spectra showed that the films form a layered structure before heat treatment. In most cases annealing for 10 min at about 200°C is sufficient to homogenize the films. The annealed films are made up of a single phase whenever this is consistent with the overall composition. Otherwise the annealed films contain a mixture of two of the Au phases or AuSn 4 and Sn depending on the atomic percentage of Sn in the films.
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