Abstract
For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process.
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