Abstract
The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.
Highlights
Efficient and cost-effective Si-based optoelectronic devices are required for all-silicon telecommunication technology [1,2,3]
The average size of the pores has been determined elsewhere by nitrogen adsorption [30] where we showed that most of the pores have a diameter of about 10 nm
In the field of new Si-based materials for optoelectronics, we investigated the Er-doping process of n+-type porous silicon (PSi) layers by several techniques
Summary
Efficient and cost-effective Si-based optoelectronic devices are required for all-silicon telecommunication technology [1,2,3]. The indirect bandgap of silicon, the material of choice for micro- and nanoelectronics, forbids luminescence and electro-optic effects, requiring the use of hybrid solutions implying complex and costly techniques [4]. Intense research is devoted to the study of ways leading to efficient Si-based light-emitting structures that would cancel the need of integrating different materials [1,2,3]. Er-doped silicon-rich oxide structures showed interesting light-emitting properties [11,12,13,14]. Optical gain from Er-doped Si structures at 1.54 μm was reported [15]
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