Abstract
4He ion channeling effect measurements and reflection electron diffraction analysis have been employed to characterize such epitaxial metal suicide films as PtSi on (111) Si, Pd 2Si on (111) Si, and NiSi 2 on (111) and (100) Si substrates. The normalized channeling yield in PtSi films has been found to rapidly increase with film thickness from 0.35 at 300 Å to 0.95 at 1000 Å, though the yields in Pd 2Si and NiSi 2 films hardly depend on the film thickness up to 2000 Å. The angular and energy dependence measurements of backscattering yields have suggested that the film thickness dependence of the PtSi films originates from finite spread in orientation of crystallites in the films.
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