Abstract
The step cooling technique for liquid phase epitaxy was used to grow In0.75Ga0.25As0.56P0.44 thin films on InP substrates. The optimum growth temperature is 635°C with a supercooling temperature (δT) of 10°C. Under these conditions, the lattice mismatches between epilayers and substrates were less than 0.03% as determined by X-ray diffraction measurements. The solid composition was studied. From optical transmission measurement, the corresponding wavelength of the quaternary layer was 1.28 μ m. The quality of the In0.75Ga0.25As0.56P0.44 epitaxial layers was studied by using the diffraction patterns from transmission electron microscopy. The measured room temperature mobility and carrier concentration of undoped InGaAsP epilayers were 3200 cm2/Vh.s and 1.76 x 1016 cm−3, respectively.
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