Abstract
The transmission or reflection measurement of p-type Si wafers with various resistivities was performed in the THz–IR frequency region, and the carrier concentration and mobility were evaluated by a simple Drude model. The range of electrical resistivity of 100–0.01 Ω cm and the range of carrier concentration of 1 × 1014 to 1 × 1019 cm−3 can be estimated non-destructively by this method. In addition, the annealing characteristics of electron- or proton-irradiated Si single crystals doped with 1015 cm−3 boron were characterized by this method in order to study the radiation damage of space solar cells. Combined with the results of far-IR and DLTS reported previously, THz spectroscopy can explain the recovery of carriers at high fluence samples, and the reverse annealing effect at low fluence samples as regards carrier scattering time in conjunction with the defect type.
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