Abstract
-15 V applied to Al back contact with respect to the top Au electrode, for the case of electric field application uniformly (a) and concentrically near the upper oxide caused by charging effects (b). Fig. 1 Energy distribution of 6-stacked Si-QDs structure with negative bias application to sample holder and Al back contact with respect to Au top electrode, respectively. The schematic view of the measurement setup is shown in the inset. Si量子ドット多重集積構造の電界電子放出特性評価 Characterization of Electron Field Emission from Multiply-Stacking Si Quantum Dots 名大院工,名大 VBL,広大院先端研 竹内 大智,牧原 克典, 大田 晃生,池田 弥央,宮崎 誠一 Nagoya Univ., Nagoya Univ. VBL, Hiroshima Univ., Daichi Takeuchi, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki E-mail: d_takeut@nuee.nagoya-u.ac.jp
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