Abstract
CuInSe2 (CIS) thin films were deposited galvanostatically as well as potentiostatically by an aqueous method. The films were characterized with respect to their structural, opto-electronic and photoelectrochemical properties for application in photovoltaic and photoelectrochemical cells. The film properties depend on parameters like electrode potential, current density, deposition temperature and post-deposition heat treatment. The photoelectrochemical characterization of the film showed that electrodeposited CIS films may be used as photodiodes for hydrogen production by a photocatalytic method. The carrier concentration and flatband potential were determined from C-V measurement, and conductivity type was determined from photoelectrochemical characterization. The annealed films showed NA = 6×l018 cm× and flat band potential VB = 0.15 eV.
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