Characterization of double-sided silicon strip detector with fast binary readout electronics using pion beams

Abstract

A n,-bulk AC-coupling double-sided silicon strip detector, designed to have a high tolerance to radiation, was characterized with fast binary readout electronics to the pion beams. The detector was beamtested before and after the proton irradiation. The proton irradiation was non-uniform and to increase the damage the detector was heated to accelerate the anti-annealing. The effective radiation level was about 1/spl times/10/sup 14/ p/cm/sup 2/ The detector was characterized by varying two parameters: bias voltage of the detector and the threshold of the discriminator of the binary readout electronics. The irradiated detector has clearly shown the effect of bulk inversion, the move of p-n junction from the p-side to the n-side, both in the efficiency variation with a fixed threshold and in the median pulse height distribution, as a function of bias voltage. In the irradiated region, collected charge in the n-side has shown the characteristic /spl radic/V dependence of the depletion depth. The binary system was proved to be efficient well below the full depletion voltage in the p-n junction side. The detector, being irradiated highly non-uniformly, the bulk changing from nearly intrinsic to the damage of about 1/spl times/10/sup 14/ p/cm/sup 2/ within the detector, worked without any noticeable failures.