Abstract
The fabrication and characterization of a double pulse-doped (DPD) GaAs MESFET grown by organometallic vapor phase epitaxy (OMVPE) are reported. The electron mobility of a DPD structure with a carrier concentration of 3*10/sup 18//cm/sup 3/ was 2000 cm/sup 2//V-s, which is about 20% higher than that of a pulse-doped (PD) structure. Implementing the DPD structure instead of the conventional PD structure as a GaAs MESFET channel, the drain breakdown voltage, current gain cutoff frequency, and maximum stable gain (MSG) increase. The maximum transconductance of 265 mS/mm at a drain current density of 600 mA/mm, a current gain cutoff frequency of 40 GHz, and an MSG of 11 dB at 18 GHz were obtained for a 0.3 mu m n/sup +/ self-aligned DPD GaAs MESFET. >
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