Abstract
Mixed crystal of Yb:YxLu1−xVO4 was grown by Czochralski method. Defects of dislocations and sub-grain boundaries in Yb:Y0.71Lu0.29VO4 single crystal were studied by using chemical etching and synchrotron X-ray topographic methods. Some of the three intersecting boundaries were revealed by chemical etching method in Yb:Y0.71Lu0.29VO4 crystal. The generalized Read–Shockley formula for intersecting boundaries was introduced to verify the one-to-one correspondence between etching pits along these sub-boundaries and edge dislocations with Burgers vectors of 〈100〉. Synchrotron X-ray topographic confirmed that the dominating imperfections in the studied Yb:Y0.71Lu0.29VO4 single crystal are a variously developed block structure and sub-grain boundaries.
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