Abstract
In order to fully characterize the structure of dislocation loops in CeO2, ion irradiations have been performed at 800 °C on CeO2 single-crystal thin films individually using 1 MeV Kr ions and 150 keV Xe ions, both to a dose of 5 × 1014 ions/cm2. Post-irradiation TEM examination, diffraction contrast imaging and high-resolution transmission electron microscopy (HRTEM), has confirmed that the irradiation-induced dislocation loops in CeO2 were Frank loops, having an interstitial nature with {1 1 1} habit planes and a 1/3 Burgers vector. Dislocation loops were confirmed to be a stacking fault in nature through TEM observations of the interference fringes inside the loop periphery.
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