Abstract
Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared with an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm/sup 2/ (AM1.5, 100 mW/cm/sup 2/).
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