Abstract
We measured the density of the trap states at the interface of SIMOX (Separation by Implanted Oxygen) wafers by high frequency C-V measurements of MOS diodes fabricated on SIMOX wafers. SIMOX structures with p-type or n-type silicon substrates are found to have traps of about 10/sup 12/ cm/sup -2/ eV/sup -1/ at the back interface. We tried to estimate the density of the trap states at the front interface, too.
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