Abstract
High-performance bottom-gate indium zinc oxide thin-film transistor (TFT) with high-k aluminum oxide thin film as the gate insulator is developed in this paper. Good-quality aluminum oxide thin film deposited via an atomic layer deposition (ALD) technique shows a quite smooth surface (RMS roughness~0.46nm). The device exhibits a field-effect mobility of 17.9cm2/Vs, a threshold voltage of −0.46V, an on/off ratio of 108, and a sub-threshold swing of 0.13V/Dec. The instability of device under temperature stress has been investigated. The observed negative VTH shift with increasing temperature can be explained by the thermal activation process, the active energy EA can be obtained as a function of VGS from fitting of the temperature dependent log(IDS) and 1/kT. The density-of-states (DOS) was extracted based on the experimentally obtained differential of activation energy (EA) with respect to VGS.
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