Abstract
Abstract We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at EV+0.09 eV and EV+0.31 eV and an electron trap at EC−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at EV+0.26 eV. Above room temperature annealing studies revealed new hole traps at EV+0.27 eV, EV+0.30 eV and EV+0.40 eV.
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