Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

Abstract

Optimization of Silicon Carbide (SiC) bulk growth by physical vapor transport (PVT) has allowed commercial realization of SiC wafers with low defect density. Dislocated micropipes (MPs), known as the most killing defects in SiC devices, have been reduced to the density levels as low as 0.7–0.5 cm−2. However applications of SiC as a material for high-power electronics are still hampered. High-performance high-power electric systems require SiC devices capable of handling the current capacity of at least 100 A, which means that the MP density of SiC wafer should be less than 0.5 cm−2 [16]. Fabrication of such high quality wafers, in particular, in low cost is indispensable for manufacturing of high-current devices.