Abstract
We report a detailed investigation of recrystallization of silicon implanted SOS films, and the effect of the recrystallization on crystalline quality and aluminum redistribution. The subsurface damage profile was generated by room temperature Si implantation. The effect of energy and dose on the damage profile was determined by channeled 2.2 MeV 4He backscatter analysis. These data were used to position the damage profile at the SOS interface. Thermal and scanned CW argon ion laser annealing were used to recrystallize the SOS films through solid state epitaxial regrowth. SIMS data are presented showing the aluminum concentration profiles before and after the silicon implants and the various anneals. High temperature annealing is shown to improve the crystalline quality, but high aluminum concentrations have been found in the silicon films. We report that laser annealing after the low temperature thermal annealing improves the crystalline quality without significant aluminum migration.
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