Abstract
In this work, deep levels introduced by RTA and by subsequent anneals in n-type silicon were studied by deep level transient spectroscopy and by photoluminescence. After annealing at 650°C, centers related to rod-like defects appeared. Furthermore, signals related to thermal donors were found in a wide temperature range. New thermal donors were found even after annealing at temperatures above 900°C. The appearance of rod-like defects indicates that during cooling after RTA soak interstitials supersaturate. The appearance of rod-like defects is accompanied by a decrease of the thermal donor concentration.
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