Abstract
An electron trap of 0.3 eV depth was characterized in hydrothermally grown, single-crystal zinc oxide using deep-level transient spectroscopy. Specimens were fabricated with Ag Schottky contacts on (0001) surfaces. The capture cross section was determined to be 2.6×10−14 cm2. The defect is a native donor and is attributed to a singly ionized oxygen vacancy V•O.
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