Abstract
Interface traps and bulk traps induced by heavy metal impurities in Si-MOS structure were characterized by isothermal capacitance transient spectroscopy (ICTS). In addition, the use of an MOS inversion time is proposed for the detection of a very low density of heavy metal impurities in the ICTS measurements. It is shown that heavy metal impurities enhanced interface trap densities as well as induced bulk traps. The degree of the enhancement varies with the species of heavy metal impurities. Interface traps may be enhanced by the substitutional heavy metal impurities. Moreover, it has been ascertained that a very low level of contamination by heavy metals can be detected by using the MOS inversion time. This has been experimentally shown by the use of a copper impurity. Furthermore, it has been clarified from the change of MOS inversion time that interface traps are also detrimental to the carrier generation lifetime. © 2000 Scripta Technica, Electr Eng Jpn, 130(4): 76–86, 2000
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