Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates

Abstract

Defects on mono-like (ml-Si), quasi-mono (qm-Si) and multicrystalline silicon solar cell substrates are studied in depth. Using the thermal admittance spectroscopy technique we found a single deep level with an activation energy between 213 and 224 meV and a capture cross section in the order of 10−15−10−14 cm2, in the case of ml-Si samples. The 271, 291 and 373 meV levels were found in qm-Si samples. The first one is associated with a capture cross section in the order of 10−16 cm2, the second one in the order of 10−14, while the third one is associated, for the same magnitude, with a value in the order of 10−12 cm2. Multicrystalline samples showed two tendencies in the Arrhenius plot fit associated with a deep level in each one. The activation energy of the first one ranges from 336 meV to 342 meV, and the capture cross sections are in the order of 10−13−10−11 cm2. The values obtained for the second one are 251 and 171 meV, with the capture cross section values in the order of 10−15 and 10−18 cm2, respectively. The nature of these defects is probably due to iron-based impurities in different complexes. Segregation into extended defects of Fei or Fei-V is the most probable cause of the deep levels with higher capture cross section value. Punctual complexes such as Fei or Fei-V2 are probably the reason for the deep levels with lower capture cross section value.