Abstract
We have investigated the effects of light radiation during plasma nitridation on the electrical properties of an Al2O3/Ge gate stack structure using the pallet for plasma evaluation (PAPE) technique. From the capacitance–voltage characteristics, the flatband voltage shift due to fixed oxide charges significantly increases after light exposure with an energy higher than 7.5 eV. In addition, the density of trapped charges near the interface and the interface state density (Dit) also significantly increase after light exposure with an energy over 11.3 eV. The net density of positive fixed oxide charges, the density of trapped charges near the interface, and Dit can be reduced by post-metallization annealing (PMA) in N2 ambient at 300 °C.
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