Abstract
Cupric oxide (CuO) films were deposited on MgO (100) substrates by two different pulsed laser deposition (PLD) configurations, molecular gas background and RF-plasma assisted, at temperatures over 250–450°C range. The films were characterized by X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), ellipsometery, and four probe conductivity measurements. The heating temperature was found to have a limited effect on the structural properties of the films grown in RF-plasma assisted background while it has a significant effect in the case of the standard gas background. The structural observations revealed that RF-plasma background increased the possibility of Frank–van der Merwe or the initial stages of Stranski–Krastanov growth mode, leaving the CuO films highly textured in (111) direction, atomically smooth and chemically stoichiometric. Optoelectronic properties of best obtained CuO film are presented as well.
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