Abstract
A single crystal of CuInTe2 (CIT) was prepared from melt by using a vertical Bridgman technique. The crystal was characterized by X-ray diffraction. Electrical conductivity, Hall effect and thermoelectric power (TEP) measurements were performed over a wide range of temperature. From these measurements, various physical parameters such as carrier mobilities, effective masses of charge carriers, diffusion coefficient, relaxation time, and diffusion length for both majority and minority carriers were estimated. In addition, the energy gap was determined as 1.057 eV and the type of conduction was observed to be p-type as indicated from the positive sign of both the Hall coefficient and thermoelectric power.
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