Abstract

High growth-rate Si epitaxy by plasma-enhanced chemical vapor deposition (PECVD) has been investigated for a thin-film solar cell application. A high growth rate of 50 μm/ h was obtained at 1050°C with plasma which is 50% larger than that by the conventional CVD without plasma. The electrical properties are almost the same for epitaxial layers with and without plasma. For undoped n-type layers, the Hall mobility and carrier density were about 600 cm 2/ V s and low 10 15 cm −3 , respectively. The electron diffusion length in doped p-type layers was about 20 μm . These electrical properties for the layer with plasma, in spite of higher growth rate, are comparable or better than those without plasma.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.