Abstract
The crystallographic structure of comet-shaped defects observed on C-face 4H-SiC epitaxial film was investigated. The comet-shaped defects consist of head and tail part. The tail part shows symmetrical shape with respect to the (1-100) plane in cross section and narrowing along the step-flow direction. The tail part consists of four 3C domains with characteristic twin boundaries of Σ3 and Σ27. The head part consists of 3C poly-crystalline grains formed during epitaxial film growth and its formation is triggered by 3C-SiC particle contamination.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
