Characterization of co-doped (In, N): ZnO by indigenous thermopower measurement system

Abstract

The thermopower measurement of (In, N) co-doped ZnO thin films have been carried out using indigenous high and low temperature thermopower measurement system. The compact thermopower measurement system has been designed, developed, tested in house. The sensitivity and accuracy of indigenous thermopower system have been investigated by measuring thermopower of standard samples like Cu, Ni, Sb etc. It has been also investigated by the comparison of carrier concentration using Hall Effect and Thermopower measurement of these (In, N) co-doped ZnO thin films. The constant temperature gradient between hot and cold junction has been maintained by using the temperature controller. The room temperature and low temperature Seebeck coefficient measurements were performed on these co-doped ZnO samples. A series of experiments have been performed to detect the p-type conductivity in co-doped ZnO thin films, particularly at low temperature. The negative Seebeck coefficient observed down to 40 K established the n-type behavior in these co-doped samples.