Abstract
Si/MgO, Si/Al 2O 3 and Si/SiO 2 co-sputtered films were prepared by placing 12 Si plates (5 mm × 15 mm) on an MgO, Al 2O 3 or SiO 2 target 100 mm in diameter during deposition. X-ray photoelectron spectroscopic (XPS) analysis revealed that the main low valency Si state was Si for Si/MgO and Si/Al 2O 3: and SiO x (0 < x < 2) for Si/SiO 2. The Si/SiO 2 films maintained a homogeneous Si component profile and an amorphous structure even after annealing at 820 °C. For the Si/MgO films, an inward diffusion of Si, crystallization of MgO and nanoparticle segregation were observed by annealing at low temperature. The Si/MgO and Si/Al 2O 3 films had a weaker photoluminescence (PL) intensity at about 1.7 eV than the Si/SiO 2 co-sputtered film by excitation at 514.5 nm, which may be due to the low content of SiO x
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