Abstract
Charged traps near the Si–SiO2 interface in a SiO2 film deposited by photo-induced chemical vapor deposition (photo-CVD) have been analyzed by the photo I–V method. In the as-deposited film, positively charged traps distribute in the region between 2 nm and 10 nm from the Si–SiO2 interface, and their density decreases monotonically with increasing depth. The density of traps in the region between 2 nm and 4 nm is decreased by annealing in N2 or O2, and that of traps in the region between 4 nm and 10 nm is decreased only by annealing in O2. Furthermore, the results of electron spin resonance (ESR) analysis suggest the possibility that the positively charged traps in the 2–4 nm region are related to the defects observed in ESR.
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