Characterization of ceramic films and interfaces by electron microscopic and spectroscopic techniques

Abstract

An understanding of the microstructural and chemical nature of thin films and film-substrate interfaces is of growing interest and importance. Of critical interest is the determination of the mechanisms for interfacial bonding and how it is affected by deposition methodology and conditions. In this study, Auger electron spectroscopy, in combination with inert-gas ion-milling and cross-sectional transmission electron microscopy, was employed to investigate the chemical and microstructural characteristics of a TiN film on an M50 steel substrate and the film-substrate interfaces formed during ion-plating at 100 and 500°C deposition temperatures. The results of both analytical technique indicated that the coating produced at 100°C was composed of a thin Ti layer (approximately 100 Å) and a thick TiN layer. Upon vacuum annealing at 500 ° C for 45 min, the Ti-rich interlayer was transformed into a TiC phase. The coating produced at 500°C consisted of a thin TiC layer and a relatively thick TiN layer. Ion-plating as well as post-vacuum annealing at 500°C resulted in grain growth and reduced defect density.