Abstract
Detailed characterization of chemical beam epitaxially (CBE) grown CdTe and Hg1−xCdxTe layers are reported. These characterizations include photoluminescence, infrared transmission, energy dispersive x-ray analysis, and variable temperature (10–300 K) Hall effect and resistivity measurements. The results indicate that high quality HgCdTe layers can be grown by CBE.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.