Abstract
The carbon nitride films have been prepared on Si substrates using microwave plasma chemical vapor deposition (MPCVD) technique. The experimental X-ray diffraction (XRD) spectra of films deposited on Si substrates appear to contain all of the strong peaks of α-C 3N 4 and β-C 3N 4, but there is considerable peak overlap, therefore the existence of these phases cannot, for certain, be claimed from this data. However, the N/C atomic ratio is close to the stoichiometric value 1.33. X-Ray photoelectron spectroscopy (XPS) analysis indicated that the binding energies of C 1s and N 1s are 286.43 and 399.08 eV, respectively. The shifts are attributed to the polarization of the CN bond. Both observed Raman and Fourier transform infrared (FT-IR) spectra were compared with the theoretical calculations. The results support the existence of a CN covalent bond in the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
