Abstract
Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal <0001> seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiC single crystal almost free of DPB [1]. In this work we present the results of a multi-scale investigation of such crystals. Using birefringence microscopy, EBSD and HR-TEM, we find evidence of a continuous improvement of the crystal quality with increasing thickness in the most defected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF density remains rather constant from the interface to the surface. The LTPL spectra collected at 5K on the upper part of samples present a nice resolution of multiple bound exciton features (up to m=5) which clearly shows the high (electronic) quality of our 3C-SiC material.
Highlights
ExperimentsThe 3C SiC sample used in this work was grown in a graphite crucible using the CF PVT (Continuous Feed Physical Vapour Transport) method
As described by Kong et al [7], DPBs are a special case of twin boundaries which comes from the two possibilities of orienting a threefold cubic 3C SiC axis on a sixfold hexagonal basis
From several 3x3 mm2 EBSD maps collected on the as grown surface, we find that the top part of sample is free of DPB and free of hexagonal inclusions
Summary
ExperimentsThe 3C SiC sample used in this work was grown in a graphite crucible using the CF PVT (Continuous Feed Physical Vapour Transport) method. From several 3x3 mm2 EBSD maps collected on the as grown surface, we find that the top part of sample is free of DPB and free of hexagonal inclusions. At the sample periphery, a small (defective) area still contains a high density of DPBs (Fig.1a,b,c).
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