Abstract
Bias Temperature Instability (BTI) is a reliability concern for SiC MOSFETs which can have serious implications in the application if the true extent of the threshold voltage shift is underestimated. In this paper the third quadrant characteristics of SiC MOSFETs are used for characterizing the impact of accelerated gate stresses, evaluating the peak threshold voltage shift and tracking the recovery after stress removal. This method allows the evaluation of the impact of cumulative pulsed stresses of both long and short duration, which can be fundamental for characterizing the dynamics of BTI-induced threshold voltage shift in SiC MOSFETs under repetitive switching at the rated and accelerated gate voltage stresses.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
