Abstract
We report results from optical second harmonic generation studies of boron charge traps near the interface of Si/SiO2. Our data suggest that a static electric field at the interface is formed during the oxide growth process due to the presence of negative boron ions (B−) in the silicon substrate and positive boron ions (B+) in the oxide. We demonstrated that the B+ state traps could be filled through the creation of neutral boron states created by internal photoelectron emission. By fitting our data, we found that the effective interface susceptibility |χ(2)| depends on doping concentration.
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