Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors

Abstract

Bismuth tri-iodide is a wide band-gap semiconductor material that may be able to operate as a radiation detector without any cooling mechanism. This material has a higher effective atomic number than germanium and CdZnTe, and thus should have a higher gamma-ray detection efficiency, particularly for moderate and high energy gamma-rays. Unfortunately, not much is known about bismuth tri-iodide, and the general properties of the material need to be investigated. Bismuth tri-iodide does not suffer from some of the material issues, such as a solid state phase transition and dissociation in air, that mercuric iodide (another high-Z, wide band-gap semiconductor) does. Thus, bismuth tri-iodide is both easier to grow and handle than mercuric iodide. A modified vertical Bridgman growth technique is being used to grow large, single bismuth tri-iodide crystals. Zone refining is being performed to purify the starting material and increase the resistivity of the crystals. The single crystals being grown are typically several hundred mm 3 . The larger crystals grown are approximately 2 cm 3 . Initial detectors are being fabricated using both gold and palladium electrodes and palladium wire. The electron mobility measured using an alpha source was determined to be 260±50 cm 2 /Vs. An alpha spectrum was recorded with one of the devices; however the detector appears to suffer from polarization.