Abstract
ABSTRACT Metal-Ferroelectric-Insulator-Semiconductor (MFIS)-FET using (Bi, Nd)4Ti3O12 (BNT)/HfO2/p-type Si structure was fabricated and characterized. HfO2 and BNT thin films were formed by metalorganic chemical vapor deposition (MOCVD) and chemical solution deposition (CSD) method, respectively. The p-type Si substrate was used to take advantage of the large ON current of n-channel FET. The fabricated MFIS-FET showed a good ID-VD, characteristics. The ID-VG curve showed the memory window width of 0.8 V. The relation between the memory window and sweep voltage was investigated, and it appeared that the applied voltage influenced to both polarization switching and charge injection.
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