Abstract
We report a detailed investigation of the Be-doped layers grown at a high As Ga flux ratio as a function of hole concentration using room and low temperature photoluminescence (PL). It has been found that the change of PL spectra with doping differs from that observed in Zn-doped layers grown by liquid phase epitaxy (LPE). The luminescence intensity increased monotonically with free hole concentration. The PL full widths at half maximum (FWHM) at room temperature and 4 K are proportional to the log of doping level and can be used to estimate free hole concentration in the range 10 17 < p < 2.25 × 10 20 cm −3. In addition, the PL peak energy E M at room temperature was found to drop slowly with hole concentration up to 2.25 × 10 20 cm −3 while E M at 4 K did not change significantly up to 3 × 10 18 cm −3 and dropped drastically thereafter. The former could be explained by band tail transitions, and the latter, we suggest, is most likely a result of band-acceptor transitions.
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