Abstract
Thin films of the solid solution system Ba(Ti1 − y Zr y )O3 (y = 0, 0.37, 1) have been grown on ⟨111⟩ Pt-coated silicon substrates by means of metal-organic chemical vapor deposition (MOCVD). Commercially available liquid precursors typical for the fabrication of perovskite thin films were used: Ba(thd)2(diethylene-triamine), Ti(OiPr)2(thd)2, and Zr(OiPr)2(thd)2 (thd = C11H19O2) dissolved in diglyme (C6H14O3). Growth took place in a horizontal type reactor (AIX-200). The vaporizer technology based on a TriJet™ liquid delivery system provided by AIXTRON. It allows to feed in four metal-organic species in a pulsed injection mode.We combined process-related studies (growth rate, rate-limiting factors) with material-related properties (crystallinity and morphology) using various analytical techniques (X-ray analysis, scanning electron microscopy). Furthermore we characterized the samples electrically with respect to the voltage dependence of permittivity and dielectric losses.
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