Abstract
Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RBS analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially l/f noise). In our work we compare the RBS spectra and low frequency noise spectra of As + implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of ion implantation of As + ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently.
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