Abstract
We have used cross-sectional scanning tunneling microscopy to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy. High-resolution images of a sample grown at 550 °C by interrupting the growth of GaAs at 200 Å intervals with a 40 s P2 flux reveal phosphide interlayers of widths as large as 30 Å with lateral variations in structure over <100 Å length scales. Images of a similar sample grown at 450 °C exhibit narrower interlayers and a lower level of phosphorus incorporation. These samples have also been characterized by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of interfaces that can occur under these growth conditions.
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