Abstract
Thin films of GexSi1−xOy were prepared by reactive magnetron sputtering using simultaneous sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon and oxygen content were varied from 0 to 30 at. % separately and the effect of the addition of each element on electrical and optical properties of amorphous germanium was studied. The electrical and optical behavior of the compound with varying elemental composition is explained based on the oxidation behavior of the Si and Ge. Increasing the silicon content was found to inhibit the formation of germanium–oxygen bonds. Values of temperature coefficient of resistance as high as −5% K−1 were obtained at moderate resistivity values around 3.8×104 Ω cm. These characteristics could be used to enhance the performance of micromachined uncooled bolometers. The composition control enabled by cosputtering components allows resistivity and activation energy to be tailored to suit different design specifications.
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