Abstract
Aluminum doped tin oxide SnO2: Al thin films were deposited on glass substrates using spray pyrolysis method. The deposited films are a polycrystalline with a tetragonal rutile structure. The variation of lattice parameters a and c decreases as a function of Al concentration due to ionic radius of (Sn=0.71Å) and (Al=0.51Å).Crystallites sizes varied between 29.25 and 32.80 nm. Al the samples have a transmission raised between 92 and 95% in the visible range. The optical band gap energy was found to vary in the range of 3.68 - 3.85eV. Electrical measurements revealed the increase of the electrical conductivity with Al content and show a maximum at 2% of the doping and then decreases due to decrease of the grain size. Following this study we can conclude that the Aluminum doped tin oxide developed by this technique can be used in gas sensors and photovoltaic cells.
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