Abstract

We investigated different AlN nano-systems using spectroscopic methods. Experimentswere performed at the Synchrotron Radiation Facility of the Laboratori Nazionali diFrascati using both XANES (x-ray absorption near edge spectroscopy) and FTIR (Fouriertransform infrared spectroscopy) techniques in order to investigate materials withboth interesting tribological and electronic properties. Comparisons have beenperformed between measurements by standard x-ray diffraction (XRD) and x-rayabsorption (XRS) at the K-edge of Al, a spectroscopy method sensitive to thelocal order and correlated to the local and empty density of states of this wideband-gap semiconductor. Preliminary XAS simulations at the Al K edge are alsopresented. Correlations between XRD and XAS have been drawn, since x-rayabsorption reveals structural information complementary to that addressed by x-raydiffraction. Moreover, a comparison has been performed by infrared (IR) absorptionboth in the mid- and in the far-IR ranges between different AlN forms: namely,powders, nanoparticles and nanotubes. Data clearly show changes connected withthe electronic properties and the optical phonon modes of AlN nano-systems.

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