Abstract
AbstractUsing mixed‐source hydride vapor‐phase epitaxy (HVPE), an AlGaN layer with high Al content on GaN/Al2O3 substrate is obtained. The AlGaN layer grown by mixed‐source HVPE is characterized by X‐ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed‐source HVPE technique, the AlGaN material is compounded from the chemical reaction between NH3 and an aluminum–gallium chloride formed using HCl that is flowed over metallic Ga mixed with Al. The XRD measurements indicate that single‐crystal hexagonal AlGaN with high Al content had been grown. The CL spectra at 4 K show that the distribution of the Al on the AlGaN surface for very high Al content (x = 0.8 in AlxGa1–xN) is not uniform. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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