Abstract
An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on a Si substrate consists of ten quantum well active layers and a 23-pairs of AlAs/Al 0.1Ga 0.9As distributed Bragg reflector (DBR). The VCSELD on a Si substrate exhibited a threshold current of 82 mA and a threshold current density of 4.2 kA/cm 2 under continuous-wave (cw) condition at 150 K. Cross-sectional scanning electron microscopy observation showed quasi-periodic zigzag roughness and nonuniformity in the DBR structure. Auger-electron spectroscopy also showed compositional transitions at the heterointerfaces of DBR. A low reflectivity of the DBR on Si substrate is caused by the degraded heterointerfaces, which prevent 300 K cw operation for the VCSELD grown on Si.
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