Abstract
This paper describes the effect of As coverage during migration enhanced epitaxy (MEE) on the structural and optical quality of (AlAs) 10(GaAs) 10 ultrathin-layer superlattices (ULSs) grown at low temperatures. The As coverage during MEE was in-situ determined by analyzing the oscillation waveform of reflection high energy electron diffraction intensity. Experimental results on Raman scattering and photoluminescence spectroscopy have revealed that high quality ULSs can be grown under a slightly As-excess condition although the optical quality deteriorates with increasing the excess of As adsorption. When the ULSs are grown completely free from excess As adsorption, on the other hand, the width of the ULS structure tends to be high with a considerable fluctuation. The increased width has been attributed to the presence of column III droplets on the surface after the irradiation of Ga and Al beams.
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