Abstract
Cu2ZnSnSe4 (CZTSe) is a promising absorber layer material for thin film solar cells because of the non-toxicity and abundance of the constituent elements. Ag-doped CZTSe bulks and thin films with the (Cu2−xAgx)ZnSnSe4 (Ag-x-CZTSe) formula at x=0, 0.1, 0.2, 0.3, and 0.4 were prepared at 600°C by reactive sintering and selenization. We successfully demonstrated Ag-doped CZTSe materials without any different result between bulks preparation and thin films devices. Defect chemistry was studied by measuring structural and electrical properties of Ag-doped CZTSe as a function of dopant concentration. The enhanced of the device performance are shown with the increasing of Ag content to the CZTSe. The films had a stack structure of Ag/ITO/ZnO/CdS/Ag-CZTSe/Mo/soda-lime glass substrate. The efficiencies of Ag-x-CZTSe thin film solar cells at x=0, 0.1, 0.2, 0.3 and 0.4 were 1.90, 2.4, and 3.4, 3.1, and 2.9%, respectively.
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