Abstract
Internal reflections occurring in the waveguides of incoherently emitting photonic devices are mapped using a novel optical coherence domain reflectometry (OCDR) technique, where the light source is the device itself. Such reflections may be caused by cleaved facets, inadvertent waveguide defects, or mntentmonal submicrometer structures. How this OCDR technique is applied to the characterization of a 1.3-μm superluminescent diode with unintentional defects and with isolated and periodic structures produced by focused-ion beam milling is described. A two-pole network theory is used to model the observed effects.
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